A focus on the advancement of technology, innovative products, and collaboration with customers from design to production has resulted in Diodes Incorporated's SBR portfolio's continual market adoption and increasing market share.
SBR, the next generation of Schottky rectifier products, is a proprietary and patented Diodes Incorporated technology that utilizes a MOS manufacturing process (traditional Schottky uses a bipolar process). This creates a superior two-terminal device with a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high-reliability characteristics of PN epitaxial diodes.
SBR diodes are designed for high-power, low-loss, and fast-switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority of carriers, thus the SBR's forward bias operation at low voltage is similar to Schottky diodes. However, the leakage current is lower than Schottky diodes in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction from the image charge.
Our SBR portfolio is ideally suited to meet the circuit requirements of: