Diodes Incorporated

Bipolar Transistors

Our years of designing, in-house packaging, and process innovation extend our bipolar processing and design leadership into building ultra-low saturation, fast switching transistors of up to 900V.

By optimizing processes for the lowest saturation voltage, reducing die area, and improving switching performance (thereby reducing power dissipation), our broad portfolio of bipolar transistors allows for ever smaller surface mount packages that meet the demands of many target applications, including those with AEC-Q101 requirements.

Inherent ESD-robustness and very low, specific on-resistance also make these bipolar transistors suitable as cost-effective alternatives to MOSFET technology in a wide range of circuit topologies.

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