DMT3009LFVWQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low RDS(ON) – Ensures On State Losses Are Minimized
100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
Wettable Flank for Improved Optical Inspection

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	12 A
\|I_DS\| @T_C = +25°C (A)	50 A
P_D @T_A = +25°C (W)	2.3 W
P_D @T_C = +25°C (W)	35.7 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	13 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.8 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	12 nC
C_ISS Typ (pF)	823 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMT3009LFVWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf