Designed to minimize on-state resistance for lower power loss, the DMN2023UCB4 delivers an RSS(on) of less than 26mOhm. In addition, its dual N- channel common-drain configuration particularly suits the charging circuits required for 1- and 2-cell lithium batteries, which commonly use a low-side battery switch. For applications requiring a high-side connection Diodes Incorporated also offers the DMP2100UCB9, which provides a dual P-channel common-source MOSFET design.
The above features coupled with a chip-scale package footprint of just 1.8mm x 1.8mm and a thickness of <0.4mm, make this new generation bi-directional MOSFET ideal for battery management, load switch and battery protection applications where smaller form factors are important. Other features include a gate threshold voltage of less than 1V, which is important to fully enhance the channel under low voltage operation, and built-in gate protection against electrostatic discharge (ESD) voltages of >2kV. Further information is available at www.diodes.com.
About Diodes Incorporated
Diodes Incorporated (Nasdaq: DIOD), a Standard and Poor's SmallCap 600 and Russell 3000 Index company, is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets. Diodes serves the consumer electronics, computing, communications, industrial, and automotive markets. Diodes' products include diodes, rectifiers, transistors, MOSFETs, protection devices, functional specific arrays, single gate logic, amplifiers and comparators, Hall-effect and temperature sensors; power management devices, including LED drivers, AC-DC converters and controllers, DC-DC switching and linear voltage regulators, and voltage references along with special function devices, such as USB power switches, load switches, voltage supervisors, and motor controllers. Diodes' corporate headquarters, logistics center, and Americas' sales office are located in Plano, Texas. Design, marketing, and engineering centers are located in Plano; San Jose, California; Taipei, Taiwan; Manchester, England; and Neuhaus, Germany. Diodes' wafer fabrication facilities are located in Kansas City, Missouri and Manchester, with two more located in Shanghai, China. In addition, two assembly-test facilities are located in Shanghai; two are located in Chengdu, China, with one in Neuhaus and one in Taipei. Additional engineering, sales, warehouse, and logistics offices are located in Fort Worth, Texas; Taipei; Hong Kong; Manchester; Shanghai; Shenzhen, China; Seongnam-si, South Korea; Suwon, South Korea; Tokyo, Japan; and Munich, Germany, with support offices throughout the world. For further information, including SEC filings, visit Diodes' website at www.diodes.com.
Company Contact:
Diodes Incorporated
Francis Tang
VP, Worldwide Discrete Products
P: 972-987-3900
E: pressinquiries@diodes.com
Investor Relations Contact:
Shelton Group
Leanne K. Sievers
EVP, Investor Relations
P: 949-224-3874
E: lsievers@sheltongroup.com
