Diodes Incorporated
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ZXMHN6A07T8

60V N-CHANNEL MOSFET H-BRIDGE

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Description

This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

Application(s)

Motor control

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity 4N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 1.4 A
PD @TA = +25°C (W) 1.1 W
RDS(ON)Max@ VGS(10V)(mΩ) 300 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 450 mΩ
QG Typ @ |VGS| = 10V (nC) 3.2 nC
CISS Typ (pF) 166 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

ICP Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC