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1200V N-Channel Silicon Carbide Power MOSFET
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This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
|Compliance (Only Automotive(Q) supports PPAP)||Standard|
|ESD Diodes (Y|N)||No|
||VDS| (V)||1200 V|
||VGS| (±V)||15, 4 ±V|
||IDS| @TC = +25°C (A)||37.2 A|
|PD @TC = +25°C (W)||208 W|
|RDS(ON)Max @ VGS(10V)(mΩ)||100 @ 15V mΩ|
||VGS(TH)| Min (V)||1.7 V|
||VGS(TH)| Max (V)||3.5 V|
|QG Typ @ |VGS| = 10V (nC)||52 @ 15V nC|
|CISS Typ (pF)||1516 pF|
|CISS Condition @|VDS| (V)||1000 V|