Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8
NRND = Not Recommended for New Design
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This new generation 30V N channel enhancement mode MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| CISS Condition @|VDS| (V) | N/A |
|---|---|
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | No |
| Polarity | N+SKY |
| QG Typ @ |VGS| = 10V (nC) | 44.6 |
| QG Typ @ |VGS| = 4.5V (nC) | 19.5 |
| QG Typ @ VGS = 5V(nC) | N/A |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(10V) (mΩ) | 13 |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 16 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 12 |
| |VGS(TH)| Max (V) | 2.2 |
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