Diodes Incorporated
PowerDI3333 8

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DMS3016SFG (Not Recommended for new design)

NRND = Not Recommended for New Design

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This new generation 30V N channel enhancement mode MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • DC-DC Converters
  • Power management functions
  • Analog Switch

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Condition @|VDS| (V) N/A
CISS Typ (pF) N/A
CISS Typ @ VDS = 15V (pF) 1886
Config/ Polarity N Channel
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 10.2
|IDS| @TC = +25°C (A) N/A
PD @TA = +25°C (W) 2.08
PD @TC = +25°C (W) N/A
Polarity N+SKY
QG Typ @ VGS = 10V (pF) 44.6
QG Typ @ |VGS| = 10V (nC) 44.6
QG Typ @ |VGS| = 4.5V (nC) 19.5
QG Typ @ VGS = 5V(nC) N/A
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 13
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) 16
|VDS| (V) 30
|VGS| (±V) 12
|VGS(TH)| Max (V) 2.2

Related Content


Technical Documents


Recommended Soldering Techniques



Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life