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DMN3027LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low RDS(ON) ensures on state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% UIS (Avalanche) rated
100% Rg tested

Application(s)

Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	25 ±V
\|I_DS\| @T_A = +25°C (A)	8 A
P_D @T_A = +25°C (W)	2.07 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	18.6 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	26.5 mΩ
\|V_GS(TH)\| Max (V)	1.8 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.3 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	11.3 nC
C_ISS Typ (pF)	580 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMN3027LFG.spice.txt

Recommended Soldering Techniques

TN1.pdf