N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and making it ideal for high efficiency power management.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 24 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 5 A |
| PD @TA = +25°C (W) | 1.45 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 36 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 52 mΩ |
| |VGS(TH)| Min (V) | 0.5 V |
| |VGS(TH)| Max (V) | 1.3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 12.6 nC |
