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| Category | High Voltage Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | NPN |
| VCEO, VCES (V) | 160 |
| IC (A) | 0.6 |
| ICM (A) | - |
| PD (W) | 0.33 |
| hFE (Min) | 80 |
| hFE (@ IC) (A) | 0.01 |
| hFE(Min 2) | 30 |
| hFE (@ IC2) (A) | 0.05 |
| VCE(sat) Max (mV) | 80 |
| VCE(SAT) (@ IC/IB) (A/mA) | 0.01/1 |
| VCE(sat) (Max.2) (mV) | 200 |
| VCE(sat) (@ IC/IB2) (A/mA) | 0.05/5 |
| fT (MHz) | 130 |
| RCE(sat) (mΩ) | - |
| Orderable Part Number | Buy from Distributor / Contact Sales | Request Samples |
|---|---|---|
| ZXTN5551FLTA | Request Sample |
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2252 | 2017-02-24 | 2017-05-24 | Add Additional Plating Process Site at Diodes Technology (Chengdu) Company Limited (CAT) for Select Parts |
