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NPN, 40V, 1A, SOT23

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This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.


  • Power MOSFET gate driving
  • Low loss power switching
  • Product Specifications

    Product Parameters

    Qualified to AEC-Q10x Yes
    Compliance (Only Automotive supports PPAP) On Request*
    Product Type NPN
    VCEO, VCES (V) 40 V
    IC (A) 1 A
    ICM (A) 2 A
    PD (W) 0.35 W
    hFE (min) 300 Min
    hFE(@ IC) 0.5 A
    hFE(Min 2) 200
    hFE(@ IC2) 1 A
    VCE (SAT)Max (mV) 200 mV
    VCE (SAT) (@ IC/IB2) (A/m A) (A/m A) 1/50
    VCE (SAT)(Max.2) 300 mV
    VCE (SAT) (@ IC/IB) (A/m A) 1/100
    fT (MHz) 150 MHz
    RCE(SAT) N/A mΩ

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    Orderable Part Number Buy from Distributor / Contact Sales Request Samples


    Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
    Avnet EU 3000 9/19/2021 Germany Buy Now
    Arrow Electronics 2663 9/19/2021 United States Buy Now
    Digi-Key Electronics 7723 9/19/2021 Europe, Asia, North America Buy Now
    Mouser Electronics Inc. 5533 9/19/2021 South America, North America, Asia, Europe, Middle East Buy Now
    Request Sample


    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2330 2018-03-29 2018-07-29 Qualification of Additional A/T site and Conversion to Palladium Coated Copper Bond Wire on Select Discrete Products
    PCN-2252 2017-02-24 2017-05-24 Add Additional Plating Process Site at Diodes Technology (Chengdu) Company Limited (CAT) for Select Parts