Diodes Incorporated
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S4M02600F(LS)

Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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Feature(s)

  • Glass Passivated Junctions for Reliability and Uniformity
  • Power Rated Economical Prices
  • Practical Level Triggering and Holding Characteristics
  • Flat, Rugged, Thermopad Construction for Low Thermal
  • Resistance High Heat Dissipation and Durability
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified No
Configuration Uni-Directional
Type SCR
Junction TemperatureTJ Max (°C) 110
On-State RMS Current(RMS)IT(RMS) (A) 4 A
Break Over Current MaxIBO Max (mA) N/A mA
Peak On-State Voltage MaxVTM Max(V) 2.2 V
Break Over Voltage MaxVBO MAX(V) N/A V
Gate Trigger Current MaxIGT MAX (mA) 0.02 mA
Peak Repetitive Forward Current MaxIDRM Max (uA) 10 uA
Peak Non-Repetitive Surge CurrentITRM / ITSM (A) 25 A
Holding Current MaxIH Max (mA) 5 mA
Peak Repetitive Off-State Voltage MaxVDRM Max (V) 600 V
Peak Repetitive Off-State VoltageVDRM / RRM (V) 600 V
Holding Current MinIH Min (mA) N/A mA

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf