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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application

  • Backlighting
  • DC-DC Converters
  • Power Management Functions
  • Features

    • Low RDS(ON) ensures on state losses are minimized
    • Small form factor thermally efficient package enables higher density end products
    • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
    • 100% UIS (Avalanche) rated
    • 100% Rg tested

Product Specifications

Product Parameters

Qualified to AECQ10x No
Automotive Compliant PPAP On Request*
Polarity N
ESD Diodes No
VDS 30 V
VGS 25 ±V
IDS @ TA = +25°C 8 A
PD @ TA = +25°C 2.07 W
RDS(ON) Max @ VGS (10V) 18.6 mΩ
RDS(ON) Max @ VGS (4.5V) 26.5 mΩ
RDS(ON) Max @ VGS (2.5V) N/A mΩ
RDS(ON) Max @ VGS (1.8V) N/A mΩ
VGS (th) Max 1.8 V
QG Typ @ VGS = 4.5V (nC) 5.3 nC
QG Typ @ VGS = 10V (nC) 11.3 nC

Related Content

Packages
PowerDI3333-8

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Authorized Distributor Quantity Inventory Date Buy Online Region
DMN3027LFG-7 Digi-Key Electronics 1935 8/11/2020 Buy Now United States
DMN3027LFG-7 Mouser Electronics Inc. 1530 8/11/2020 Buy Now United States