Diodes Incorporated — Analog and discrete power solutions
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DMN2400UFB

N-Channel MOSFET

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application.

Application(s)

  • Battery Charging
  • Power Management Functions
  • DC-DC Converters
  • Portable Power Adaptors
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP) Standard
    AEC Qualified Yes
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 0.75 A
    PD @TA = +25°C (W) 0.47 W
    RDS(ON)Max@ VGS(4.5V)  (mΩ) 550 mΩ
    RDS(ON)Max@ VGS(2.5V)  (mΩ) 750 mΩ
    RDS(ON)Max@ VGS(1.8V)  (mΩ) 900 mΩ
    |VGS(TH)| Min (V) 0.5 V
    |VGS(TH)| Max (V) 0.9 V
    QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
    CISS Typ (pF) 38 pF

    Related Content

    Packages

    Technical Documents

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity