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DMN2230UQ

20V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Boost Application
  • Analog Switch

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive (Q)
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±
|IDS| @TA = +25°C (A) 2
PD @ TA = +25°C (W) 0.6
RDS(ON)Max @ VGS(4.5V)(mΩ) 110 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 145 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 230 mΩ
|VGS(th)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 2.3 nC
CISS Typ (pF) 188
CISS Condition [@VDS] (V) 10

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Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

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