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DMN10H170SFGQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

100% Unclamped Inductive Switching, Test in Production – Ensures more reliable and robust end application
Low RDS(ON) – Ensures on state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

Application(s)

Motor Control
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	2.9 A
\|I_DS\| @T_C = +25°C (A)	8.5 A
P_D @T_A = +25°C (W)	2 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	122 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	133 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	7 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	14.9 nC
C_ISS Typ (pF)	870.7 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2522	2021-08-24	2021-11-24	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products