Diodes Incorporated — Analog and discrete power solutions
Back to Inactve Datasheet Archive

BAV5004WSQ (NRND)

NRND = Not Recommended for New Design

switching diode

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive supports PPAP) Yes
Configuration Single
CT(pF) Max @ VR = 0V, f = 1MHz 2.5
ESD Diodes (Y|N) No
Forward Voltage Drop VF @ IF (mA) 1.29
IR(nA) Max @ VR=5V N/A
IR(µA) Max @ VR=30V N/A
IR(uA) Max @ VR=80V N/A
Maximum Average Rectifier Current IO (mA) 300
Maximum Peak Forward Surge Current IFSM (A) 5
Maximum ReverseCurrent IR (µA) 1
Maximum Reverse Current IR @ VR (V) 240
Peak RepetitiveReverse VoltageVRRM (V) 400
Polarity Anode, Cathode
Power Rating(mW) 200
AEC Qualified Yes
Reverse RecoveryTime trr (ns) 50
TotalCapacitance CT (pF) 2.5
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω N/A
V(BR)R (V) Min (µA) 400
VF(V) Max @ IF=1.0mA N/A
VF(V) Max @ IF=100mA 1.09
VF(V) Max @ IF=10mA N/A

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2533 2021-09-02 2022-03-02 Device End of Life (EOL)
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)