Diodes Incorporated

SBR 产品信息



电力电路或需要调节讯号的任何类型电路的中心组件是整流二极管。传统上,这些应用所使用的产品类型为以下两者之一:pn 接面二极管与萧特基势垒二极管。这些技术在电路设计中皆已非常成熟,并且成为大多数 IC 制造技术的基础。萧特基二极管于 1926 年首度问世,接着 1940 年出现 pn 接面二极管。我们将在此讨论整流器技术的突破性创新,它独特地撷取这些传统装置各自的优点,并整合为单一组件。

当今的整流装置与 20 世纪初有很大的差异,但仍受到物理限制而无法适用于某些应用,而且在使用方面仍有许多限制。这些产品通常仅提供部分的设计满意度,而且在针对特定技术的优点进行设计时,必须做出重大的设计权衡以补偿参数上的缺陷。



pn-junction diode

Schottky barrier diode

"fast recovery" diode

Forward Voltage, Vf

High Low High

Reverse Leakage Current, Irm

Low High Low

Breakdown Voltage range, Vrrm

High Medium  High

Surge reliability

High Low  High 

Thermal immunity

High Low  High

Switching Speed, (1/trr)

Low High High 

As can be seen from the above, important operating characteristics are complementary between the pn-junction and the Schottky barrier diode. This is due to the fundamental physics that describes the mode of operation of the two device types.

No device from these families can give satisfaction for relevant parameters. Until now.

Introducing the Super Barrier Rectifier from Diodes Incorporated. State-of-the-art integrated circuit wafer processing technology has allowed the design and manufacturability of a device, which is able to integrate and improve the benefits of the two existing rectifier technologies into a single device. The creation of a finite conduction cellular IC, combined with inherent design uniformity has allowed manufacturing costs to be kept competitive with existing power device technology, thus producing the first real breakthrough in rectifier technology in over two decades. The technology has been designed with some key objectives:

  • Very low on-state losses (Vf), even for high-voltage devices, and operation at elevated currents
  • Low leakage currents, even for higher current devices, and operation at elevated temperatures
  • Dynamic device operation to permit the use of a single component for wide-band operation
  • Increased ruggedness of the device by utilizing precision state-of-the-art IC manufacturing processes
  • Superior surge resistance due to absence of Schottky junctions
  • Versatile design to allow entire product range to benefit from technology, and permit high voltage devices to achieve ultra-low Vf parameter
  • Best-in-class repetitive avalanche capability to compensate for inadequacies of fragile Schottky reverse behavior, thus providing highest reliability factor
  • Tighter parametric distribution to reduce lot-to-lot variations, improving efficiency of design trade-offs
  • Permit the end user a more cost-effective design strategy

Diodes Incorporated has embodied all these desirable functions into a single component, which, through increased efficiency of power-conditioning circuits will increase the value of subsystem design, and through features traditionally incompatible in a single component, permit the development and integration of systems previously not considered.

SBR Application Notes

Item # Title (Abbreviated)
AN1010A SBR® Avalanche Energy