Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Dual N-Channel Enhancement Mode MOSFET
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This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high-efficiency, low-voltage, power-management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | N+N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 100 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 2.1 A |
| PD @TA = +25°C (W) | 1.25 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 250 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 300 (@6V) mΩ |
| QG Typ @ |VGS| = 4.5V (nC) | 4.2 (@5V) nC |
| QG Typ @ |VGS| = 10V (nC) | 7.7 nC |
| CISS Typ (pF) | 405 pF |
