Dual P-Channel Enhancement Mode MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
No |
Polarity |
P+P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
50 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
0.22@5V A |
PD @TA = +25°C (W) |
0.78 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
8000@5V mΩ |
|VGS(TH)| Min (V) |
0.8 V |
|VGS(TH)| Max (V) |
2 V |
QG Typ @ |VGS| = 4.5V (nC) |
0.6@5V nC |
QG Typ @ |VGS| = 10V (nC) |
1.2 nC |
CISS Typ (pF) |
37 pF |
CISS Condition @|VDS| (V) |
25 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |