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DMHC10H170SFJ

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

High-Efficiency Bridge Rectifiers

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	2N2P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	2.3, 2.9 A
P_D @T_A = +25°C (W)	2.1 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	250, 160 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	300, 200 mΩ
\|V_GS(TH)\| Min (V)	1, 1 V
\|V_GS(TH)\| Max (V)	3, 3 V
Q_G Typ @ \|V_GS\| = 10V (nC)	17.5, 9.7 nC
C_ISS Typ (pF)	1239, 1167 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMHC10H170SFJ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products