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DMHC10H170SFJ

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • High-Efficiency Bridge Rectifiers

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance

Product Specifications

Product Parameters

Qualified to AECQ10x Yes
Automotive Compliant PPAP On Request*
Type 2 x P, 2 x N
ESD Diodes No Y/N
VDS 100 V
VGS 20 ±V
IDSA +25ºC 2.3, 2.9 A
PDW +25ºC 2.1 W
RDS(ON) Max @ VGS (10V) 250, 160 mΩ
RDS(ON) Max @ VGS (4.5V) 300, 200 mΩ
CISS Typ 1239, 1167 pF
QG Typ @ VGS = 10V (nC) 17.5, 9.7

Related Content

Packages
V-DFN5045-12

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMHC10H170SFJ-13

DMHC10H170SFJ-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Digi-Key Electronics 812 1/20/2021 Europe, Asia, North America Buy Now
Mouser Electronics Inc. 707 1/20/2021 South America, North America, Asia, Europe, Middle East Buy Now
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