60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET
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The ZXMS6006DG is N channel enhancement mode self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality and is ideally suited to general purpose switching, driven from 3.3V or 5V microcontrollers, in harsh environments where standard MOSFETs are not rugged enough.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Configuration |
Single |
Polarity |
N |
TAB |
Drain |
BVDSS (V) |
60 |
ID VIN = 5V (A) |
2.8 |
PD (W) |
3 |
RDS(ON) Max @ VIN (3V) (mΩ) |
125 |
RDS(ON) Max @VIN (5V) (mΩ) |
100 |
VDS(SC) VIN = 5V (V) |
16 |
EAS (mJ) |
490 |
TJ (°C) |
150 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2737 | 2025-07-18 | 2025-10-17 | Qualification of New Deflashing and Tin Plating Line |
