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This gate driver ensures rapid switching of the MOSFET to minimize power losses and distortion in high current switching applications. It can typically drive 1.5A into the low gate impedance with just 10mA input from a controller. The turn-on and turn-off switching behavior of the MOSFET can be individually tailored to suit an application. By defining the switching characteristics appropriately, EMI and cross conduction can be reduced.
High-Gain Buffer with Typically 1.5A Output from 10mA Input
5 Amps Peak Output Current
40V Supply for +20V to -18V Gate Driving to Prevent dV/dt Induced False Triggering and Minimize On-Losses
Emitter-Follower that is Rugged to Latch-Up/Shoot-Though
Fast Switching Emitter-Follower configuration:
2ns propagation delay time
9ns rise/fall time, 1000pF load
Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances