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ZXGD3002E6

20V, 9A, Gate Driver, SOT26

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Description

The ZXGD3002E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation delay times down to 2ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.

Application(s)

Power MOSFET and IGBT Gate Driving in

  • Synchronous switch-mode power supplies
  • Secondary side synchronous rectification
  • Plasma Display Panel power modules
  • 1, 2 and 3-phase motor control circuits
  • Audio switching amplifier power output stages

Product Specifications

Product Parameters

Category Gate Driver Transistors
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN + PNP
VIN & VCC max (V) 20
I(source) typ  (A) 2.2
@ IIN  (mA) 10
I(sink) typ  (A) 2
@ IIN 2(mA) 10
IPK typ 9 A
@ IIN  2 1 A
td(rise) typ 1.25 ns
tr typ 8.3 ns
td(fall) typ 1.6 ns
tf typ 10.8 ns

Related Content

Packages
SOT26

Technical Documents

SPICE Model

Design tool model software

Application Notes

Calculators

ICP Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
ZXGD3002E6TA

ZXGD3002E6TA

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Digi-Key Electronics 6907 4/18/2021 Europe, Asia, North America Buy Now
Farnell, An Avnet Company 3028 4/18/2021 England Buy Now
Farnell, An Avnet Company 3028 4/18/2021 England Buy Now
Mouser Electronics Inc. 11711 4/18/2021 South America, North America, Asia, Europe, Middle East Buy Now
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PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices