Diodes Incorporated
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ZVP4525G

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits.

Application(s)

  • Earth recall and dialling switches
  • Electronic hook switches
  • High voltage power MOSFET drivers
  • Telecom call routers
  • Solid state relays
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) No
    |VDS| (V) 250 V
    |VGS| (±V) 40 ±V
    |IDS| @TA = +25°C (A) 0.265 A
    PD @TA = +25°C (W) 2 W
    RDS(ON)Max@ VGS(10V)(mΩ) 14000 mΩ
    |VGS(TH)| Min (V) 0.8 V
    |VGS(TH)| Max (V) 2 V
    QG Typ @ |VGS| = 10V (nC) 3 nC
    CISS Typ (pF) 82 pF
    CISS Condition @|VDS| (V) 25 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    ICP Reports

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC