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ZVP4525E6

P-Channel Enhancement Mode MOSFET

Datasheet

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Description

This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT89 and SOT223 versions are also available.

Application(s)

Earth Recall and dialling switches

Electronic hook switches

High Voltage Power MOSFET Drivers

Telecom call routers

Solid state relays

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	250 V
\|V_GS\| (±V)	40 ±V
\|I_DS\| @T_A = +25°C (A)	0.197 A
P_D @T_A = +25°C (W)	1.1 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	14000 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	18000 (@3.5V) mΩ
\|V_GS(TH)\| Max (V)	2 V
Q_G Typ @ \|V_GS\| = 10V (nC)	2.45 nC
C_ISS Typ (pF)	73 @ 25V pF

Technical Documents

SPICE Model

ZVP4525E6.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products