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T8M50T600B(LS)

Triacs Silicon Bidirectional Thyristors

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Feature(s)

  • Blocking voltage to 600V
  • High immunity to dv/dt – 500V/us Minimum at +125°C
  • Uniform Gate Trigger Currents in Three Quadrants
  • On-State Current Rating of 8.0 Amperes RMS at 100℃
  • Minimizes Snubber Networks for Protection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified Yes
TJ MAX (°C) 125 °C
ITRMS(A) 8 A
VTM Max(V) 1.6 V
IGT MAX (mA) 5 mA
IDRM MAX (uA) 10 uA
ITRM / ITSM (A) 80 A
IH Max (mA) 50 mA
VDRM MAX(V) 600 V
VDRM / RRM (V) 600 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf