Diodes Incorporated
Back to Thyristors

T4M35T600B(LS)

Triacs Silicon Bidirectional Thyristors

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • Blocking voltage to 600V
  • High immunity to dv/dt – 500V/us Minimum at +125°C
  • High Surge Current Capability - 40 Amperes
  • Operational in Three Quadrants: Q1, Q2, and Q3
  • On-State Current Rating of 4.0 Amperes RMS at +100°C
  • Minimizes Snubber Networks for Protection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
AEC Qualified Yes
TJ MAX (°C) 125 °C
ITRMS(A) 4 A
VTM Max(V) 1.6 V
IGT MAX (mA) 35 mA
IDRM MAX (uA) 10 uA
ITRM / ITSM (A) 40 A
IH Max (mA) 35 mA
VDRM MAX(V) 600 V
VDRM / RRM (V) 600 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf