Diodes Incorporated — Analog and discrete power solutions
Back to T4M35T600B(LS)

T4M35T600B(LS)

Triacs Silicon Bidirectional Thyristors

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • Blocking voltage to 600V
  • High immunity to dv/dt – 500V/us Minimum at +125°C
  • High Surge Current Capability - 40 Amperes
  • Operational in Three Quadrants: Q1, Q2, and Q3
  • On-State Current Rating of 4.0 Amperes RMS at +100°C
  • Minimizes Snubber Networks for Protection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

Junction Temperature (°C)

125

AEC Qualified

Yes

Configuration

Bi-Directional

Type

TRIAC

Peak Repetitive Off-State VoltageVDRM / RRM (V)

600 V

On-State RMS Current(RMS)IT(RMS) (A)

4 A

Peak On-State Voltage MaxVTM Max(V)

1.6 V

Gate Trigger Current MaxIGT MAX (mA)

35 mA

Peak Repetitive Forward Current MaxIDRM Max (uA)

10 uA

Peak Non-Repetitive Surge CurrentITRM / ITSM (A)

40 A

Holding Current MaxIH Max (mA)

35 mA

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products