T4M10T600B(LS)

Triacs Silicon Bidirectional Thyristors

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Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
High Immunity to dv/dt - 50V/µs Minimum at +125°C
Minimum and Maximum Values of I_GT, V_GT and I_H Specified for Ease of Design on
On-State Current Rating of 4 Amperes RMS at +100°C
High Surge Current of 40 Amperes
Rugged, Economical TO-220AB Package
Operational in Three Quadrants: Q1, Q2, and Q3
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Product Specifications

Compliance (Only Automotive supports PPAP)	Standard
AEC Qualified	Yes
TJ MAX (°C)	125 °C
ITRMS(A)	4 A
VTM Max(V)	1.6 V
IGT MAX (mA)	35 mA
IDRM MAX (uA)	10 uA
ITRM / ITSM (A)	40 A
IH Max (mA)	15 mA
VDRM MAX(V)	600 V
VDRM / RRM (V)	600 V

Recommended Soldering Techniques

TN1.pdf