Diodes Incorporated
SOT363

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SOT363.png
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MMDT3946Q

Complementary, 40V, 0.2A, SOT363

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO >40V
  • IC = 200mA High Collector Current
  • Ultra-Small Surface Mount Package
  • Epitaxial Planar Die Construction
  • Ideal for Low Power Amplification and Switching
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. "Green" Device 
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable 

Product Specifications

Product Parameters

Category Small Signal Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN + PNP
VCEO, VCES (V) 40
IC (A) 0.2
PD (W) 0.2
hFE (Min) 100
hFE (@ IC) (A) 0.01
hFE(Min 2) 30
hFE (@ IC2) (A) 0.1
VCE(sat) Max (mV) 200. 250
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 300. 400
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 300

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)