Diodes Incorporated
Back to Transistor (BJT) Master Table

FZT1051A

NPN, 40V, 5A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 40V
  • IC = 5A High Continuous Collector Current
  • ICM = 20A Peak Pulse Current
  • Low Saturation Voltage VCE(sat) < 120mV @ 1A
  • RSAT = 50mΩ @ 5A for a Low Equivalent On-Resistance
  • hFE Specified up to 10A for a High Gain Hold-Up
  • Complementary PNP Type: FZT1151A
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Solenoid, Relay and Actuator Drivers
  • DC Modules
  • Motor Control

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 40
IC (A) 5
ICM (A) 20
PD (W) 3
hFE (Min) 270
hFE (@ IC) (A) 1
hFE(Min 2) 130
hFE (@ IC2) (A) 5
VCE(sat) Max (mV) 120
VCE(SAT) (@ IC/IB) (A/mA) 1/10
VCE(sat) (Max.2) (mV) 340
VCE(sat) (@ IC/IB2) (A/mA) 5/100
fT (MHz) 155
RCE(sat) (mΩ) 50

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC