Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

W-DFN2020-3-SWP-Type-A.png

Back to Avalanche Transistors

FMMT411FDBWQ

NPN LOW VOLTAGE AVALANCHE TRANSISTOR IN W-DFN2020-3 SWP

Datasheet

Contact Sales

Description

The DIODES^TM FMMT411FDBWQ is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges.

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

I_USB = 35A typical
BV_CBO > 80V
BV_CEO > 15V
Specifically Designed for Low Voltage Avalanche Mode Operation
Low Profile 0.62mm High Package for Thin Applications

Sidewall Tin Plating for Wettable Flanks in AOI
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The FMMT411FDBWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Application(s)

Laser diode drivers for ranging and measurement (LIDAR)
Radar systems
Fast edge switch generators
High-speed pulse generators

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive supports PPAP)	Automotive
V_{CBO (V)}	80 V
V_CEO, V_{CES (V)}	15 V
I_{CM (A)}	60 A
P_{D (W)}	1.7 W
I_{SA (A)}	35 A
I_SA(@ V_C) (V)	70 V
I_SA(@ C_CE) (pF)	470 pF
h_{FE (min)}	100 Min
f_T Min (MHz)	80 MHz
@ I_{C (mA)}	10 mA

Technical Documents

Recommended Soldering Techniques

TN1.pdf