Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. W-DFN2020-3 (SWP) (Type A)

Back to FMMT411FDBW

FMMT411FDBW

NPN LOW VOLTAGE AVALANCHE TRANSISTOR IN U-DFN2020-3

Datasheet

Contact Sales

Description

The FMMT411FDBW is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges.

Feature(s)

80A Peak Avalanche Current
BV_CBO > 80V
BV_CEO > 15V
Specifically Designed for Low Voltage Avalanche Mode Operation
Low Profile 0.62mm High Package for Thin Applications
Sidewall tin plating for wettable flanks in AOI
4mm2 Footprint, 50% Smaller than SOT23
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. “Green” Device
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Laser Diode Drivers for Ranging and Measurement (LIDAR)
Radar Systems
Fast Edge Switch Generator
High-Speed Pulse Generators

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
V_{CBO (V)}	80 V
V_CEO, V_{CES (V)}	15 V
I_{CM (A)}	60 A
P_{D (W)}	1.7 W
I_{SA (A)}	35 A
I_SA(@ V_C) (V)	70 V
I_SA(@ C_CE) (pF)	470 pF
h_{FE (min)}	100 Min
f_T Min (MHz)	80 MHz
@ I_{C (mA)}	10 mA

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.