Diodes Incorporated
SOT363

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT363.png
Back to Transistor (BJT) Master Table

DSS8110Y

NPN, 100V, 1A, SOT363

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Product Specifications

Product Parameters

Category Low Saturation Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 100
IC (A) 1
ICM (A) 3
PD (W) 0.625
hFE (Min) 150
hFE (@ IC) (A) 0.25
hFE(Min 2) 80
hFE (@ IC2) (A) 1
VCE(sat) Max (mV) 40
VCE(SAT) (@ IC/IB) (A/mA) 0.1/10
VCE(sat) (Max.2) (mV) 200
VCE(sat) (@ IC/IB2) (A/mA) 1/100
fT (MHz) 100
RCE(sat) (mΩ) 200

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2305 2018-02-28 2018-05-28 Addition of A Passivation Layer Over The Top Metal of The Die for Selected BJT Devices