Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO247-4 Standard
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO247-4 Standard
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO247-4 Standard
1700V N-Channel Silicon Carbide Power MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Compliance (Only Automotive Supports PPAP) |
Automotive |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
1700 V |
|VGS| (±V) |
20, 5 ±V |
|IDS| @TC = +25°C (A) |
6.58 A |
PD @TC = +25°C (W) |
73.5 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
850 (@ 20V) mΩ |
|VGS(TH)| Min (V) |
2 V |
|VGS(TH)| Max (V) |
4 V |
QG Typ @ |VGS| = 10V (nC) |
14.8 (@ 20V) nC |
CISS Typ (pF) |
178 pF |
CISS Condition @|VDS| (V) |
1000 V |
