Diodes Incorporated
Back to MOSFET Master Table

DMTH8030LPDWQ

80V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH8030LPDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Motors

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 80 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 28.5
PD @TA = +25°C (W) 3.1
PD @TC = +25°C (W) 41
RDS(ON)Max@ VGS(10V)(mΩ) 26 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 45 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 5.4 nC
QG Typ @ |VGS| = 10V (nC) 10.4 nC
CISS Typ (pF) 631 pF
CISS Condition @|VDS| (V) 40 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC