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DMTH4M70SPGW

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI8080-5

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production—
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON)—Minimizes Power Losses
Wettable Flank for Improved Optical Inspection
Fast Switching Speed
Low Input Capacitance
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Engine Management Systems
Body Control Electronics
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	40 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	460 A
P_D @T_A = +25°C (W)	5.6 W
P_D @T_C = +25°C (W)	428 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	0.7 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	117.1 nC
C_ISS Typ (pF)	10053 pF
C_ISS Condition @\|V_DS\| (V)	20 V

Technical Documents

SPICE Model

DMTH4M70SPGW.spice.txt

Recommended Soldering Techniques

TN1.pdf