100V +175°C N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 100 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 100 A |
| PD @TA = +25°C (W) | 2.5 W |
| PD @TC = +25°C (W) | 187 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 9.5 mΩ |
| |VGS(TH)| Max (V) | 4 V |
| QG Typ @ |VGS| = 10V (nC) | 56.4 nC |
| CISS Typ (pF) | 4468 pF |
| CISS Condition @|VDS| (V) | 50 V |
