60V N-Channel Enhancement Mode MOSFET
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This new generation N-channel enhancement mode MOSFET is
designed to minimize RDS(ON) yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 14.6 A |
|IDS| @TC = +25°C (A) | 52.1 A |
PD @TA = +25°C (W) | 2.64 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 8.3 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 12,5 mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 15.4 nC |
QG Typ @ |VGS| = 10V (nC) | 28.4 nC |
CISS Typ (pF) | 1406 pF |
CISS Condition @|VDS| (V) | 30 V |
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