60V N-Channel Enhancement Mode MOSFET
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This new generation N-channel enhancement mode MOSFET is
designed to minimize RDS(ON) yet maintain superior switching
performance. This device is ideal for use in notebook battery power
management and load switch
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
14.6 A |
|IDS| @TC = +25°C (A) |
52.1 A |
PD @TA = +25°C (W) |
2.64 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
8.3 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
12,5 mΩ |
|VGS(TH)| Max (V) |
2.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
15.4 nC |
QG Typ @ |VGS| = 10V (nC) |
28.4 nC |
CISS Typ (pF) |
1406 pF |
CISS Condition @|VDS| (V) |
30 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
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