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DMT67M8LCGQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMT67M8LCGQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	16 A
\|I_DS\| @T_C = +25°C (A)	64.6 A
P_D @T_A = +25°C (W)	2.2 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	5.7 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	8.1 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	37.5 nC
C_ISS Typ (pF)	2130 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMT67M8LCGQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile