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DMT67M8LCG

60V N-Channel Enhancement Mode MOSFET

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Description

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and load switch.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • Synchronous Rectifier
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

Yes

|VDS| (V)

60 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

16 A

|IDS| @TC = +25°C (A)

64.6 A

PD @TA = +25°C (W)

2.2 W

RDS(ON)Max@ VGS(10V)  (mΩ)

5.7 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

8.1 mΩ

|VGS(TH)| Max (V)

2.5 V

QG Typ @ |VGS| = 4.5V (nC)

20 nC

QG Typ @ |VGS| = 10V (nC)

37.5 nC

CISS Typ (pF)

2130 pF

CISS Condition @|VDS| (V)

30 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products