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DMT64M1LCG

65V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching (UIS) Test in Production –
Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes Power Losses
Wettable Flank for Improved Optical Inspection
Fast Switching Speed
Low Input Capacitance
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
The DMTH47M2SPSWQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/

Application(s)

Synchronous Rectifier
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	65 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	16.7 A
\|I_DS\| @T_C = +25°C (A)	67.8 A
P_D @T_A = +25°C (W)	2.6 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	5.4 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	7.3 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	28.9 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	51.4 nC
C_ISS Typ (pF)	2626 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMT64M1LCG.spice.txt

Recommended Soldering Techniques

TN1.pdf