Dual N-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
30 V |
|VGS| (±V) |
12 ±V |
|IDS| @TA = +25°C (A) |
10.6 A |
|IDS| @TC = +25°C (A) |
30 A |
PD @TA = +25°C (W) |
1.9 W |
PD @TC = +25°C (W) |
16 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
11.1 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
15 mΩ |
|VGS(TH)| Max (V) |
1.8 V |
QG Typ @ |VGS| = 4.5V (nC) |
7.4 nC |
QG Typ @ |VGS| = 10V (nC) |
14.6 nC |
CISS Typ (pF) |
894 pF |
CISS Condition @|VDS| (V) |
15 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2750 | 2025-08-28 | 2025-11-27 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test (A/T) Site with Standardization of Assembly Bill of Materials and Change of Lead Frame Type as well as Die Attach Material at Currently Qualified A/T Site for Select Discrete Products |
