100V N-Channel Enhancement Mode MOSFET
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This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 100 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 14 A |
|IDS| @TC = +25°C (A) | 48 A |
PD @TA = +25°C (W) | 2.7 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 9.5 mΩ |
|VGS(TH)| Max (V) | 4 V |
QG Typ @ |VGS| = 10V (nC) | 30 nC |
CISS Typ (pF) | 2085 pF |
CISS Condition @|VDS| (V) | 50 V |
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