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DMT10H009SCG

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.

Feature(s)

100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	14 A
\|I_DS\| @T_C = +25°C (A)	48 A
P_D @T_A = +25°C (W)	2.7 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	9.5 mΩ
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	30 nC
C_ISS Typ (pF)	2085 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMT10H009SCG.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile