DMP58D0LFB (Not Recommended for new design)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	On Request
C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	27
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	0.31
P_D @T_A = +25°C (W)	1.22
Polarity	P
Q_G Typ@ V_GS = -10V	N/A
Q_G Typ@ V_GS = -4.5V (nC)	N/A
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	18000
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	8000 (@5V)
\|V_DS\| (V)	50
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	2.1

Technical Documents

SPICE Model

DMP58D0LFB .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2561	2022-02-17	2022-08-17	Device End of Life (EOL)
PCN-2299	2018-03-01	2018-06-01	Additional Qualified (A/T) Assembly Test Site