P-Channel Enhancement Mode MOSFET
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This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
P |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
12 ±V |
|IDS| @TA = +25°C (A) |
3.4 A |
PD @TA = +25°C (W) |
1.4 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
100 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
165 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
600 mΩ |
|VGS(TH)| Min (V) |
0.7 V |
|VGS(TH)| Max (V) |
1.2 V |
QG Typ @ |VGS| = 4.5V (nC) |
1.1 nC |
CISS Typ (pF) |
152 pF |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
