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DMP2018LFK

P-Channel Enhancement Mode MOSFET

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Description

This new generation 20V P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

  • DC-DC Converters
  • Power management functions
  • Notebook PC Applications
  • Portable Equipment Applications
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    P

    ESD Diodes (Y|N)

    Yes

    |VDS| (V)

    20 V

    |VGS| (±V)

    12 ±V

    |IDS| @TA = +25°C (A)

    9.2 A

    PD @TA = +25°C (W)

    2.1 W

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    16 mΩ

    RDS(ON)Max@ VGS(2.5V)  (mΩ)

    20 mΩ

    |VGS(TH)| Min (V)

    0.45 V

    |VGS(TH)| Max (V)

    1.2 V

    QG Typ @ |VGS| = 4.5V (nC)

    53 nC

    QG Typ @ |VGS| = 10V (nC)

    113 nC

    CISS Typ (pF)

    4748 pF

    CISS Condition @|VDS| (V)

    10 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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