P-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a high performance MOSFET in an ultra-small 0.8mmx0.8mm package.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | Yes |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 12 V |
|VGS| (±V) | 8 ±V |
|IDS| @TA = +25°C (A) | 3.2 A |
PD @TA = +25°C (W) | 1.1 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 83 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) | 96 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) | 150 mΩ |
|VGS(TH)| Min (V) | 0.35 V |
|VGS(TH)| Max (V) | 0.8 V |
QG Typ @ |VGS| = 4.5V (nC) | 9 nC |
CISS Typ (pF) | 680 pF |
CISS Condition @|VDS| (V) | 6 V |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.