Diodes Incorporated
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DMNH6008SCTQ

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AECQ101 and supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low Input Capacitance
  • Low Input/Output Leakage

Application(s)

  • Motor Control
  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 130 A
PD @TC = +25°C (W) 210 W
RDS(ON)Max@ VGS(10V)(mΩ) 8 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 4.5V (nC) 21 nC
QG Typ @ |VGS| = 10V (nC) 40 nC
CISS Typ (pF) 2596 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf