Diodes Incorporated — Analog and discrete power solutions
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DMNH10H028SCT

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low Input Capacitance
  • Low Input/Output Leakage
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 60
PD @TA = +25°C (W) 2.8
RDS(ON)Max@ VGS(10V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 31.9 nC
CISS Typ (pF) 1942 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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